features trenchfet power mosfet 175 c junction temperature applications automotive applications such as: ? abs ? eps ? motor drives industrial SUM60N06-15 vishay siliconix document number: 72080 s-32406?rev. b, 24-nov-03 www.vishay.com 1 n-channel 60-v (d-s) 175 c mosfet product summary v (br)dss (v) r ds(on) ( ) i d (a) 60 0.015 @ v gs = 10 v 60 a d g s n-channel mosfet to-263 s d g top view ordering information: SUM60N06-15 SUM60N06-15-e3 (lead free) absolute maximum ratings (t c = 25 c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 60 gate-source voltage v gs 20 v continuous drain current (t j = 175 c) t c = 25 c i d 60 c on ti nuous d ra i n c urren t (t j = 175 c) t c = 125 c i d 35 a pulsed drain current i dm 100 a avalanche current i ar 35 repetitive a valanche energy a l = 0.1 mh e ar 61 mj maximum power dissipation a t c = 25 c p d 100 b w maximum power dissipation a t a = 25 c c p d 3.75 w operating junction and storage temperature range t j , t stg ? 55 to 175 c thermal resistance ratings parameter symbol limit unit junction-to-ambient?pcb mount c r thja 40 c/w junction-to-case r thjc 1.4 c/w notes a. duty cycle 1%. b. see soa curve for voltage derating. c. when mounted on 1? square pcb (fr-4 material).
SUM60N06-15 vishay siliconix www.vishay.com 2 document number: 72080 s-32406?rev. b, 24-nov-03 specifications (t j =25 c unless otherwise noted) parameter symbol test condition min typ max unit static drain-source breakdown voltage v (br)dss v ds = 0 v, i d = 250 a 60 v gate-threshold voltage v gs(th) v ds = v gs , i d = 250 a 2 4 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na v ds = 60 v, v gs = 0 v 1 zero gate voltage drain current i dss v ds = 60 v, v gs = 0 v, t j = 125 c 50 a g dss v ds = 60 v, v gs = 0 v, t j = 175 c 250 on-state drain current a i d(on) v ds 5 v, v gs = 10 v 100 a v gs = 10 v, i d = 30 a 0.012 0.015 drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 30 a, t j = 125 c 0.025 ds(on) v gs = 10 v, i d = 30 a, t j = 175 c 0.030 forward transconductance a g fs v ds = 15 v, i d = 30 a 20 s dynamic b input capacitance c iss 2100 output capacitance c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 300 pf reverse transfer capacitance c rss 125 total gate charge c q g 30 45 gate-source charge c q gs v ds = 30 v, v gs = 10 v, i d = 60 a 11 nc gate-drain charge c q gd ds , gs , d 8 turn-on delay time c t d(on) 10 15 rise time c t r v dd = 30 v, r l = 0.5 12 20 ns turn-off delay time c t d(off) v dd = 30 v , r l = 0 . 5 i d 60 a, v gen = 10 v, r g = 2.5 20 30 ns fall time c t f 10 15 source-drain diode ratings and characteristics (t c = 25 c) b continuous current i s 110 a pulsed current i sm 300 a forward voltage a v sd i f = 30 a, v gs = 0 v 1.1 1.5 v reverse recovery time t rr i 60 a di/dt 100 a/ 50 85 ns peak reverse recovery current i rm(rec) i f = 60 a, di/dt = 100 a/ s 2 4 a reverse recovery charge q rr 0.05 0.17 c notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. c. independent of operating temperature.
SUM60N06-15 vishay siliconix document number: 72080 s-32406?rev. b, 24-nov-03 www.vishay.com 3 typical characteristics (25 c unless noted) 0 500 1000 1500 2000 2500 3000 0 102030405060 0 4 8 12 16 20 0 102030405060 0 20 40 60 80 100 120 0 102030405060 0.000 0.004 0.008 0.012 0.016 0.020 0.024 0 20406080100 0 25 50 75 100 01234567 0 25 50 75 100 0246810 output characteristics transfer characteristics capacitance gate charge transconductance on-resistance vs. drain current v ds ? drain-to-source voltage (v) v gs ? gate-to-source voltage (v) ? drain current (a) i d ? gate-to-source voltage (v) q g ? total gate charge (nc) i d ? drain current (a) v ds ? drain-to-source voltage (v) c ? capacitance (pf) v gs ? transconductance (s) g fs 25 c ? 55 c 5 v t c = 125 c v gs = 30 v i d = 60 a v gs = 10 thru 7 v v gs = 10 v c iss c oss t c = ? 55 c 25 c 125 c 4 v ? on-resistance ( r ds(on) ) ? drain current (a) i d c rss i d ? drain current (a) 6 v
SUM60N06-15 vishay siliconix www.vishay.com 4 document number: 72080 s-32406?rev. b, 24-nov-03 typical characteristics (25 c unless noted) (normalized) ? on-resistance ( r ds(on) ) 0.0 0.5 1.0 1.5 2.0 2.5 ? 50 ? 25 0 25 50 75 100 125 150 175 on-resistance vs. junction t emperature source-drain diode forward voltage t j ? junction temperature ( c) v sd ? source-to-drain voltage (v) ? source current (a) i s 100 10 1 0.4 0.6 0.8 1.0 1.2 v gs = 10 v i d = 30 a t j = 25 c t j = 150 c 0.2 60 65 70 75 80 ? 50 ? 25 0 25 50 75 100 125 150 175 on-resistance vs. junction t emperature t j ? junction temperature ( c) i d = 1 m a avalanche current vs. time t in (sec) 0.00001 0.0001 0.01 1 (a) i dav 0.001 i av (a) @ t j = 150 c 0.1 (normalized) ? on-resistance ( r ds(on) ) 1000 0.1 1 10 100 i av (a) @ t j = 25 c
SUM60N06-15 vishay siliconix document number: 72080 s-32406?rev. b, 24-nov-03 www.vishay.com 5 thermal ratings 0 10 20 30 40 50 60 70 0 25 50 75 100 125 150 175 safe operating area v ds ? drain-to-source voltage (v) 1000 10 0.1 1 10 100 limited by r ds(on) 0.1 100 t c = 25 c single pulse maximum drain current vs. case t emperature t c ? ambient t emperature ( c) ? drain current (a) i d ? drain current (a) i d 1 normalized thermal transient impedance, junction-to-case square wave pulse duration (sec) 2 1 0.1 0.01 10 ? 4 10 ? 3 10 ? 2 10 ? 1 normalized effective transient thermal impedance 1 0.2 0.1 0.05 0.02 duty cycle = 0.5 single pulse dc, 100 ms 10 ms 1 ms 10 s 100 s
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